NOT KNOWN FACTS ABOUT N TYPE GE

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the composition is cycled by way of oxidizing and annealing phases. Because of the preferential oxidation of Si in excess of Ge [sixty eight], the initial Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani,